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SI2301BDS-T1-E3 The Vishay Siliconix Si2301BDS-T1-E3 is a P-Channel MOSFET with a drain-source voltage of -20V and a typical on-resistance of 0.100 Ohms at VGS = -4.5V. It is supplied in a TO-236 (SOT-23) surface-mount package.
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SI2301BDS-T1-E3

Available from 1 distributors
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The Vishay Siliconix Si2301BDS-T1-E3 is a P-Channel MOSFET with a drain-source voltage of -20V and a typical on-resistance of 0.100 Ohms at VGS = -4.5V. It is supplied in a TO-236 (SOT-23) surface-mount package.
✓ Total Stock: 369 pcs

SI2301BDS-T1-E3 Available from 1 distributor

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369 pcs
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SI2301BDS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Lead Style
Mounting Type
Package / Case
SVHC Present
Tape & Reel
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SI2301BDS-T1-E3 Description

Short technical summary and product information.

The Vishay Siliconix Si2301BDS-T1-E3 is a P-Channel TrenchFET Power MOSFET designed for various applications. It features a maximum drain-source voltage (VDS) of -20V and a gate-source voltage (VGS) of ±8V.

 

The on-state resistance (RDS(on)) is typically 0.100 Ohms at VGS = -4.5V and 0.150 Ohms at VGS = -2.5V. Continuous drain current (ID) is rated at -2.4A at 25°C ambient temperature.

 

This MOSFET is housed in a TO-236 (SOT-23) package, suitable for surface mounting. It operates within a junction and storage temperature range of -55°C to 150°C. The device is halogen-free and compliant with RoHS Directive 2002/95/EC.

 

Key electrical characteristics include a gate threshold voltage (VGS(th)) between -0.45V and -0.95V, and a zero gate voltage drain current (IDSS) of 1µA at -20V VDS.

SI2301BDS-T1-E3 Quick Information

Product Type: MOSFET
Series: SI2301
Canonical Name: Si2301BDS P-Channel 2.5 V (G-S) MOSFET
Subcategory: P-Channel

SI2301BDS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2301BDS-T1-E3 Features

  • P-Channel 2.5 V (G-S) MOSFET
  • Low on-resistance: 0.100 Ohm typical
  • Drain-source voltage: -20 V
  • TO-236 (SOT-23) surface mount package
  • Halogen-free and RoHS compliant

SI2301BDS-T1-E3 Applications

  • Used in load switch applications.
  • Suitable for battery protection circuits.
  • Ideal for power management in portable devices.
  • Can be used in DC-DC converter circuits.
  • Applicable in low-voltage motor control.

SI2301BDS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

-20V

What is the gate threshold voltage?

Typical -0.45V

What is the on-resistance?

Typical 0.1 Ohm at Vgs = -4.5V

What is the maximum continuous drain current?

-2.4A at 25°C

What is the operating temperature range?

-55 to 150°C

What is the package type?

TO-236 (SOT-23)

What is the maximum power dissipation?

0.9W at 25°C

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