| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
516,571 pcs
|
516571 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
18 pcs
|
18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Vishay SI4800BDY is an N-Channel Power MOSFET utilizing TrenchFET technology for high efficiency and optimized PWM performance. It offers a maximum drain-source voltage of 30V and a continuous drain current of 9.5A at 25°C.
Key electrical characteristics include a low maximum on-state resistance of 0.0185Ω at VGS = 10V and 7A at VGS = 4.5V. The device also features fast switching times, with a typical rise time of 12ns and fall time of 14ns.
Packaged in an SOIC surface-mount package, the SI4800BDY operates over a temperature range of -55°C to 150°C. It is designed for applications requiring efficient power handling and rapid switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
9.5 A.
SOIC surface-mount package.
-55 to 150 °C.
18.5 mΩ at VGS = 10 V, ID = 9 A.
Maximum 1.8 V at VDS = VGS, ID = 250 µA.
2.5 W.