| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
475,789 pcs
|
475789 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Vishay Dale Si4599DY is a versatile MOSFET featuring both N-channel and P-channel configurations within a single package. It boasts a drain-source breakdown voltage of 40V, making it suitable for various power switching applications.
Key electrical characteristics include a low typical on-state resistance of 0.0355 Ohms at VGS = 10V for the N-channel and 0.045 Ohms at VGS = -10V for the P-channel. The device supports continuous drain currents up to 6.8A for the N-channel and 5.8A for the P-channel at 25°C case temperature.
Designed with efficiency in mind, the Si4599DY utilizes TrenchFET® technology. It is packaged in a standard SO-8 surface-mount package, facilitating integration into compact electronic designs. The component is also halogen-free, aligning with environmental compliance standards.
Applications for the Si4599DY include backlighting inverters for LCD displays and full bridge converters, where its dual-channel capability and robust performance are advantageous.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40 V.
The typical gate threshold voltage is 1.4 V.
The typical on-state resistance is 0.0295 Ohms.
The maximum continuous drain current is 6.8 A.
The maximum power dissipation is 3.0 W.
The operating junction and storage temperature range is -55 to 150 °C.
The package type is SO-8.