SI9430DY-T1
Vishay
The SI9430DY-T1 is a P-Channel MOSFET from Vishay Siliconix with a 20V drain-source voltage and 19W maximum power dissipation. It offers low on-state resistance for efficient switching.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
157 pcs
|
157 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request | |
|
124 pcs
|
124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The Vishay Dale SI4470EY is an N-Channel Power MOSFET with a 60V drain-source voltage rating. It is designed for applications such as primary side switching.
Key electrical characteristics include a typical continuous drain current of 12.7A at 25°C and a low on-state resistance of 0.009Ω at VGS = 10V and ID = 12A. The device operates within a junction temperature range of -55°C to 175°C.
This MOSFET is housed in a standard SO-8 package, suitable for surface mounting. It also features Halogen-free compliance according to IEC 61249-2-21 definition and is compliant to RoHS Directive 2002/95/EC.
The TrenchFET® Power MOSFET technology ensures efficient performance. The typical gate threshold voltage is 2V, with a typical total gate charge of 46nC at VDS = 30V, VGS = 10V, and ID = 12A.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
SO-8.
-55°C to 175°C.
0.009Ω at VGS = 10V, ID = 12A.
12.7A.
2V typical.
46nC typical.
