| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,628 pcs
|
1628 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel |
The Infineon BSP89 is a high-performance N-Channel MOSFET belonging to the SIPMOS family. Designed for logic-level gate drive, this enhancement mode device offers a drain-source breakdown voltage of 240V and a continuous drain current of up to 0.35A at 25°C.
Key electrical characteristics include a low on-state resistance, with RDS(on) typically 4.2 Ω at VGS=10V and 0.35A, and 4.9 Ω at VGS=4.5V and 0.32A. The device also features a gate threshold voltage ranging from 0.8V to 1.8V.
Packaged in a SOT-223 surface-mount package, the BSP89 is suitable for various applications requiring efficient switching and signal amplification. It operates within a wide temperature range of -55°C to +150°C and is qualified according to AEC Q101 standards.
The MOSFET includes an integrated reverse diode with a continuous forward current of 0.35A. It is RoHS compliant and halogen-free, meeting modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage (VDS) for the BSP89 is 240V.
The typical on-state resistance is 4.2 Ω at VGS=10V and ID=0.35A, and 4.9 Ω at VGS=4.5V and ID=0.32A.
The continuous drain current rating at 25°C is 0.35A.
The BSP89 MOSFET is supplied in a SOT-223 package.
The operating and storage temperature range for the BSP89 is -55°C to +150°C.
Yes, the BSP89 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSP89 is 1.