| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Vishay Dale SI4447ADY is a P-Channel power MOSFET featuring TrenchFET® technology. It is designed for applications such as load switches and adapter switches, commonly found in notebook PCs.
Key electrical characteristics include a drain-source breakdown voltage of -40V and a maximum on-resistance of 0.045 Ω at a gate-source voltage of -10V. The continuous drain current is rated at -7.2A at 25°C case temperature.
This MOSFET is housed in an SO-8 package and is suitable for surface mounting. It operates within a junction and storage temperature range of -55°C to +150°C. The device is also 100% Rg and UIS tested, ensuring reliability in demanding applications.
The SI4447ADY is lead (Pb)-free and halogen-free, aligning with environmental compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -40 V (minimum) at Vgs = 0 V and Id = -250 μA.
The maximum continuous drain current is -7.2 A at Tc = 25 °C, -5.7 A at Tc = 70 °C, -5.5 A at Ta = 25 °C, and -4.4 A at Ta = 70 °C.
The maximum on-resistance is 0.045 Ω at Vgs = -10 V and 0.062 Ω at Vgs = -4.5 V.
The operating junction and storage temperature range is -55 °C to +150 °C.
The SI4447ADY is available in an SO-8 surface-mount package.
The maximum power dissipation is 4.2 W at Tc = 25 °C, 2.7 W at Tc = 70 °C, 2.5 W at Ta = 25 °C, and 1.6 W at Ta = 70 °C.
The gate-source voltage rating is ±20 V.