| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150,667 pcs
|
150667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type |
The Vishay Siliconix Si2325DS is a P-Channel MOSFET with a drain-source breakdown voltage of 150V. It utilizes TrenchFET technology to achieve ultra-low on-resistance, with typical values of 1.2 Ω at VGS = -10 V and ID = -0.5 A, and 1.3 Ω at VGS = -6.0 V and ID = -0.5 A. This MOSFET is suitable for applications such as active clamp circuits in DC/DC power supplies.
The device is housed in a compact TO-236 (SOT-23) package, making it ideal for space-constrained designs. It operates over a junction temperature range of -55 °C to 150 °C. The continuous drain current is rated at -0.69 A at 25 °C and -0.55 A at 70 °C. Key electrical parameters include a gate-threshold voltage between -2.5 V and -4.5 V, and a total gate charge of 7.7 nC typical.
This MOSFET offers features like high power dissipation capabilities, with a maximum power dissipation of 1.25 W at 25 °C. Thermal resistance is managed with a junction-to-ambient rating of 75 °C/W typical. The device is also available in halogen-free versions, adhering to IEC 61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is -150 V.
The typical on-resistance at VGS = -10 V and ID = -0.5 A is 1.2 Ω.
The gate threshold voltage ranges from -2.5 V to -4.5 V.
The operating junction and storage temperature range is -55 °C to 150 °C.
The Si2325DS is supplied in a TO-236 (SOT-23) package.
Yes, a halogen-free version is available according to IEC 61249-2-21.