| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
210 pcs
|
210 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Vishay Dale Si2304BDS is an N-Channel MOSFET designed for various applications. It features a maximum drain-source voltage of 30V and a gate-source voltage range of ±20V. The device offers a low on-state resistance, with a typical Rds(on) of 0.055 Ohms at VGS = 10V and ID = 2.5A, and a maximum of 0.070 Ohms under the same conditions. At VGS = 4.5V, the typical Rds(on) is 0.105 Ohms for an ID of 2.6A.
This MOSFET has a continuous drain current capability of up to 3.2A at 25°C ambient temperature. Its operating junction and storage temperature range is from -55°C to 150°C. The device is packaged in a TO-236 (SOT-23) surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a gate threshold voltage typically between 1.5V and 3V. The device also exhibits a low zero gate voltage drain current of 0.5 µA maximum at 30V VDS and VGS = 0V. It is compliant with RoHS3 directives and is halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The typical gate threshold voltage is 1.5 V.
The typical drain-source on-resistance at VGS = 10V is 0.055 Ω.
The typical continuous drain current at 25°C is 3.2 A.
The operating junction and storage temperature range is -55 to 150 °C.
The Si2304BDS is supplied in a TO-236 (SOT-23) package.
The Si2304BDS is RoHS3 compliant.