| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
258,286 pcs
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258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The SI1539DL-T1-GE3 from Vishay Siliconix is a versatile MOSFET designed for load switching in portable devices. This component integrates both N-channel and P-channel MOSFETs, offering flexibility in circuit design.
Key electrical characteristics include a Drain-Source Voltage (VDS) of 20V. The N-channel configuration provides an R DS(on) as low as 0.090 Ω at VGS = 4.5V and a continuous drain current (ID) of 3.28A. The P-channel configuration offers an R DS(on) of 0.155 Ω at VGS = -4.5V and a continuous drain current (ID) of -2.80A.
This MOSFET is built using TrenchFET technology, rated for 1.8V, and features fast switching capabilities. It operates within a junction and storage temperature range of -55°C to 150°C. The device is compliant with RoHS Directive 2002/95/EC and is Halogen-free according to IEC 61249-2-21 Definition.
The SI1539DL-T1-GE3 is supplied in a thermally enhanced SC-70 (6-LEADS) package, suitable for surface mounting. Its design makes it well-suited for applications requiring efficient load switching in compact electronic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 20 V for both the N-channel and P-channel MOSFETs.
The gate-source voltage rating is ±20 V for both channels.
For the N-channel, 3.28 A at TA=25°C; for the P-channel, -2.80 A at TA=25°C. At TA=85°C, it derates to 2.12 A and -1.72 A respectively.
The SI1539DL-T1-GE3 is available in an SC-70 (6-lead) surface-mount package.
The operating junction and storage temperature range is -55°C to +150°C.
The typical drain-source on-state resistance is 0.090 Ω at VGS = 4.5 V and ID = 2.55 A.
The typical gate threshold voltage is 0.45 V for the N-channel and -0.45 V for the P-channel at ID = ±100 µA.