IPP051N15N5
Infineon
The Infineon IPP051N15N5 is an N-channel MOSFET designed for high-frequency switching applications. It offers a 150V drain-source voltage and a maximum continuous drain current of 120A.
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67 pcs
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67 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RFG75N05E from Intersil is an advanced N-Channel enhancement mode silicon gate power MOSFET. It is designed to withstand a specified level of energy in the breakdown avalanche mode. This device is suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors that require high speed and low gate drive power.
Key electrical specifications include a continuous drain current of 75A and a drain-to-source voltage of 50V. The on-resistance (RDS(ON)) is rated at a low 0.008 Ohms when VGS is 10V and ID is 75A. The device can handle pulsed drain currents up to 200A and has a maximum power dissipation of 240W at 25°C.
Operating and storage temperatures range from -55°C to 175°C. The MOSFET is rated for electrostatic discharge (ESD) and includes a temperature-compensated PSPICE model. It is supplied in a JEDEC style TO-247 package, suitable for through-hole mounting.
This MOSFET is designed to be operated directly from integrated circuits, simplifying system design. Its robust construction and specified avalanche energy withstand capability make it a reliable choice for demanding power applications.
| Qty | Low | High |
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| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage for the RFG75N05E is 50V.
The RFG75N05E has a continuous drain current rating of 75A.
The typical on-resistance (RDS(ON)) of the RFG75N05E is 0.008 Ohms at VGS = 10V and ID = 75A.
The operating temperature range for the RFG75N05E is -55°C to 175°C.
The RFG75N05E is supplied in a TO-247 package.
