| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,023 pcs
|
5023 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,827 pcs
|
1827 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation |
The Infineon IPP051N15N5 is a high-performance N-channel Power MOSFET from the OptiMOS™ 5 family. It is designed for demanding applications requiring efficient power conversion.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 150V and a maximum on-resistance (RDS(on)) of 5.1 mΩ at the TO-220 package configuration. The device can handle a continuous drain current (ID) of up to 120A at 25°C case temperature, and 115A at 100°C. Pulsed drain current capability reaches 480A.
This MOSFET is suitable for high-frequency switching and synchronous rectification due to its excellent gate charge x RDS(on) product (FOM) and very low reverse recovery charge (Qrr) of 83 nC. It operates reliably up to a junction temperature of 175°C.
The IPP051N15N5 comes in a standard TO-220-3 package, designed for through-hole mounting. It is Pb-free and RoHS compliant, making it suitable for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 150V.
The maximum continuous drain current (ID) at 25°C is 120A.
The device is in a PG-TO 220-3 package.
The maximum power dissipation is 300W at 25°C.
-55°C to 175°C.
Yes, it is RoHS3 compliant.
Yes, it is halogen free.