| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
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The Infineon IPP200N25N3 is an N-channel MOSFET belonging to the OptiMOSTM3 family. It is designed for high-frequency switching and synchronous rectification applications, offering excellent gate charge times R DS(on) product (FOM) and very low on-resistance.
Key electrical specifications include a Drain-Source Breakdown Voltage (VDS) of 250V and a Continuous Drain Current (ID) of 64A at 25°C. The device exhibits a low Drain-Source On-State Resistance (R DS(on)) of typically 17.5 mΩ at 10V gate drive and 64A drain current. It operates reliably at temperatures up to 175°C.
The MOSFET is housed in a PG-TO220-3 package, suitable for through-hole mounting. Its features make it ideal for demanding power conversion applications where efficiency and thermal performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 250V minimum.
The continuous drain current is 64A at 25°C case temperature.
The maximum on-state resistance is 20 mΩ at VGS=10V and ID=64A.
The operating junction temperature range is -55°C to 175°C.
The IPP200N25N3 is available in a PG-TO220-3 through-hole package.
The gate threshold voltage is 2V minimum, 3V typical, and 4V maximum at VDS=VGS and ID=270 µA.
The maximum power dissipation is 300W at 25°C case temperature.