| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,457 pcs
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1457 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,158 pcs
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1158 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
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| Halogen Free | |
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The Infineon IRF150P220 is a high-performance N-channel MOSFET belonging to the StrongIRFET family. It features a maximum drain-source voltage of 150V and a continuous drain current capability of 203A at 25°C case temperature.
This MOSFET boasts a very low on-resistance, with a typical value of 2.3 mΩ and a maximum of 2.7 mΩ. Its excellent gate charge x RDS(on) figure of merit (FOM) makes it ideal for high switching frequency applications, contributing to reduced conduction losses and lower overshoot voltage.
The IRF150P220 is designed for increased reliability, rated for a 175°C operating temperature, which is higher than standard 150°C rated parts. It is supplied in the PG-TO247-3 package, suitable for through-hole mounting.
Key features include optimized Qrr and product validation according to JEDEC standards. The component is also halogen-free, compliant with IEC61249-2-21.
The maximum drain-source voltage is 150 V.
The package is PG-TO247-3, which is a through-hole package.
The operating junction temperature range is -55°C to 175°C.
The typical on-resistance is 2.3 mΩ, with a maximum of 2.7 mΩ.
At 25°C, the continuous drain current is 203 A (package limited) and 316 A (silicon limited). At 100°C, the silicon-limited current is 224 A.
The typical gate charge (0V to 10V) is 160 nC.
The single pulse avalanche energy is 834 mJ.