STD16NF06LT4
ST
The ST STD16NF06LT4 is an N-Channel Power MOSFET designed for switching applications. It features a 60V drain-source voltage and a low on-resistance.
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37 pcs
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37 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PSMN040-100MSE is an N-channel MOSFET specifically designed for high power Power-over-Ethernet (PoE) applications, supporting systems capable of delivering up to 90W.
This MOSFET features a drain-source voltage rating of 100V and a maximum drain current of 30A at 25°C. Its low on-state resistance (RDSon) is 36.6 mΩ at 10A and 25°C, minimizing conduction losses. The total gate charge is 30 nC, contributing to efficient switching.
The device is housed in an ultra-reliable LFPAK33 package, which provides superior thermal performance and ruggedness. This package is suitable for surface mounting.
Key features include enhanced forward biased safe operating area for superior linear mode operation and very low IDSS. It is designed to meet the demands of high power density and thermal management required in modern PoE systems, including IEEE802.3at and proprietary solutions.
| Qty | Low | High |
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| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The maximum continuous drain current is 30 A at 25 °C with VGS = 10 V.
The typical drain-source on-state resistance is 29.4 mΩ at VGS = 10 V and ID = 10 A.
The PSMN040-100MSE is available in an LFPAK33 surface-mount package.
The storage temperature range is -55 °C to 175 °C.
The typical total gate charge is 30 nC at VGS = 10 V, ID = 10 A, and VDS = 50 V.