Mfr Part #:

PSMN1R0-30YLC

The NXP Semiconductors PSMN1R0-30YLC is a logic level enhancement mode N-channel MOSFET designed for industrial and communication equipment. It features a low RDS(on) and optimized gate drive.

✓ Total Stock: 35,215 pcs

$ Price Range: $2.27

PSMN1R0-30YLC Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	35,000 pcs On Request	35000 pcs	On Request	1	On Request	On Request	24+	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	215 pcs On Request	215 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

PSMN1R0-30YLC Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	NXP Semiconductors
Junction Temperature	-55 to 175 °C
Mounting Type	Surface Mount
Storage Temperature	-55 to 175 °C
Termination Style	SMD/SMT

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PSMN1R0-30YLC Description

Short technical summary and product information.

The NXP Semiconductors PSMN1R0-30YLC is an N-channel MOSFET utilizing NextPower technology, housed in an LFPAK package. This device is designed and qualified for a wide range of industrial, communication, and domestic equipment.

Key electrical specifications include a drain-source voltage of 30V and a low drain-source on-state resistance (RDSon) of 0.85 mΩ to 1.15 mΩ at VGS = 10V. It also offers a total gate charge (QG(tot)) of 103.5 nC to 145 nC, contributing to high system efficiencies.

Applications for the PSMN1R0-30YLC include DC-to-DC converters, lithium-ion battery protection, load switching, power OR-ing, server power supplies, and synchronous rectification. The MOSFET is qualified to 175°C, ensuring high reliability in demanding environments.

The LFPAK56; Power-SO8 package is suitable for surface mounting. This MOSFET is optimized for 4.5V gate drive, offering ultra-low QG, QGD, and QOSS for improved efficiency at various load conditions.

PSMN1R0-30YLC Quick Information

Product Type: MOSFET

Canonical Name: N-channel 30 V 1.15 mΩ logic level MOSFET

Subcategory: N-channel

PSMN1R0-30YLC Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

PSMN1R0-30YLC Estimated Pricing

Qty	Low	High
1+	$2.27	$2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PSMN1R0-30YLC Features

30 V drain-source voltage rating.
Low 0.85 mΩ typical RDSon.
Optimized for 4.5V gate drive.
High reliability, qualified to 175°C.
LFPAK56; Power-SO8 package.

PSMN1R0-30YLC Applications

DC-to-DC converters.
Lithium-ion battery protection.
Load switching applications.
Server power supplies.
Sync rectifier circuits.

PSMN1R0-30YLC FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the PSMN1R0-30YLC?

The maximum drain-source voltage is 30 V.

What is the typical drain-source on-state resistance at VGS = 10V?

The typical drain-source on-state resistance is 0.85 mΩ.

What is the maximum junction temperature for this MOSFET?

The maximum junction temperature is 175 °C.

What is the RoHS status of the PSMN1R0-30YLC?

The RoHS status is Compliant.

What is the Moisture Sensitivity Level (MSL) for the PSMN1R0-30YLC?

The Moisture Sensitivity Level is 1 Unlimited.

What is the REACH status for this component?

The REACH status is Unaffected.