TK25S06N1L

The Toshiba TK25S06N1L is an N-Channel MOSFET belonging to the U-MOSIII-H series, designed for demanding applications such as automotive systems, switching regulators, and motor drives. This device features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of up to 25A at 25°C case temperature. Its key electrical characteristics include a low typical on-resistance (RDS(ON)) of 15 mΩ at VGS = 10V and 12.5A, and a gate threshold voltage (Vth) ranging from 1.5V to 2.5V.

The MOSFET is AEC-Q101 compliant, ensuring suitability for automotive environments. It operates with a gate-source voltage (VGSS) range of ±20V. The device exhibits typical capacitances such as input capacitance (Ciss) of 855pF, feedback capacitance (Crss) of 69pF, and output capacitance (Coss) of 490pF. Switching characteristics include a typical rise time (tr) of 8ns, turn-on time (ton) of 14ns, fall time (tf) of 6ns, and turn-off time (toff) of 23ns.

With a maximum power dissipation (PD) of 57W at 25°C case temperature and a channel-to-case thermal resistance (Rth(ch-c)) of 2.6°C/W, effective thermal management is crucial. The operating temperature range is -55°C to 175°C. The TK25S06N1L is housed in a DPAK+ surface-mount package, facilitating integration into compact designs.