| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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162,309 pcs
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162309 pcs | On Request | 1 | On Request | On Request | 21+20+ | On Request | On Request | |
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1,383 pcs
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1383 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PMV65XPEA is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device plastic package.
Key electrical characteristics include a drain-source voltage (Vds) of -20 V and a typical drain-source on-state resistance (Rds(on)) of 67 mΩ at VGS = -4.5 V and ID = -2.8 A. The device features enhanced power dissipation capability with a Ptot of 890 mW at Tamb = 25 °C and provides ElectroStatic Discharge (ESD) protection up to 2 kV HBM.
This MOSFET is AEC-Q101 qualified, making it suitable for demanding applications. Its features make it ideal for use as a relay driver, high-speed line driver, high-side load switch, and in general switching circuits.
The drain-source voltage rating is -20 V.
The typical on-state resistance is 67 mΩ at VGS = -4.5 V and ID = -2.8 A.
The maximum power dissipation is 890 mW at an ambient temperature of 25 °C.
The PMV65XPEA is available in the SOT23 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.