| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,813 pcs
|
7813 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
3,145 pcs
|
3145 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Manufacturer Name | |
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| Tape & Reel |
The AOS AO3414 is a 20V N-Channel MOSFET utilizing advanced trench technology. It provides excellent RDS(ON) performance, with values as low as 62mΩ at VGS = 4.5V, 70mΩ at VGS = 2.5V, and 85mΩ at VGS = 1.8V. This device is suitable for load switch and PWM applications, offering efficient operation with gate voltages as low as 1.8V.
Key electrical characteristics include a continuous drain current of 3A at 25°C and 1.4A at 70°C, with a pulsed drain current capability of 16A. The breakdown voltage is 20V, and the gate threshold voltage ranges from 0.4V to 1V. Capacitance values include Ciss at 260pF typical, Coss at 48pF typical, and Crss at 27pF typical. Dynamic parameters like total gate charge (Qg) are 2.9nC typical.
The AO3414 is housed in a compact SOT23 package, suitable for surface mounting. Its thermal characteristics include a junction-to-ambient thermal resistance of 63°C/W steady-state. The device operates within a junction and storage temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The continuous drain current is 3A at 25°C.
The typical RDS(ON) is 62mΩ at 4.5V VGS.
The AO3414 is available in the SOT23 package.
The junction and storage temperature range is -55°C to 150°C.