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46,894 pcs
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46894 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BSS123 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It is designed for logic level compatibility and offers extremely fast switching capabilities.
Key electrical characteristics include a drain-source breakdown voltage of 100V, a gate threshold voltage ranging from 1V to 2.8V, and a maximum continuous drain current of 150mA. The drain-source on-state resistance is a maximum of 6 Ohms at VGS = 10V and ID = 120mA.
This MOSFET is suitable for applications such as relay drivers, high-speed line drivers, and telephone ringers. It is supplied in the compact SOT23 subminiature surface mounting package, making it ideal for space-constrained designs.
The operating junction and storage temperature range is from -55°C to 150°C. The thermal resistance from junction to ambient is typically 500 K/W when mounted on an FR4 board.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the BSS123 is 100V.
The gate threshold voltage for the BSS123 is between 1V and 2.8V, typically 2V.
The maximum continuous drain current for the BSS123 is 150mA.
The BSS123 is supplied in the SOT23 subminiature surface mounting package.