JANTX1N2804B
Microsemi Corporation
The Microsemi JANTX1N2804B is a 50W Zener diode with a nominal voltage of 6.8V. It is housed in a TO-204AD (TO-3) package.
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE3036 is a silicon NPN photo Darlington light detector housed in a popular TO-18 type hermetic package. Designed for applications requiring high radiation sensitivity at low light levels, such as industrial inspection, processing and control, counters, sorters, and switching or logic circuits.
This phototransistor is sensitive throughout the visible and near-infrared spectral range, offering wider application possibilities. Key electrical characteristics include a collector-emitter voltage (VCEO) of 40V and a maximum light current (IL) of 250mA. The device operates within a junction temperature range of -65°C to +200°C.
Its TO-18 package is designed for easy handling and mounting. The NTE3036 features an external base for added control, making it a versatile component for light detection and switching tasks in demanding environments.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 40V.
The NTE3036 is packaged in a TO-18 through-hole package.
The operating junction temperature range is -65°C to +200°C.
The typical light current is 20mA at VCC=5V, RL=10Ω, and H=0.5mW/cm².
The maximum collector dark current is 100nA at VCE=10V.
The photo current rise time is 100µs maximum and fall time is 150µs maximum.
The total device dissipation is 250mW at TA=+25°C.
