| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N23E from ASI-Automation Systems Interconnect is a point contact mixer diode designed for applications spanning S-Band through X-Band frequencies. This diode utilizes epitaxial silicon, optimized for low noise figure and wide bandwidth, making it suitable for single or multiple device mixer configurations.
It is designed for use in waveguide, coaxial, and stripline applications. The diode features mechanical reliability and is housed in a cartridge package style, specifically designed for low noise performance. The operating temperature range is from -55°C to +150°C.
Typical performance specifications include noise figures as low as 5.5 dB at 3.060 GHz and 6.0 dB at 9.375 GHz, with VSWR values of 1.5:1. IF impedance ranges from 335 to 465 Ohms, and conversion loss is typically 5.0 dB at 3.060 GHz and 5.5 dB at 9.375 GHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
At 3.06 GHz the maximum noise figure is 8.5 dB, and at 9.375 GHz it is 12.0 dB.
At 3.06 GHz the maximum conversion loss is 5.0 dB; at 9.375 GHz it is 7.0 dB.
At 3.06 GHz the IF impedance ranges from 350 to 450 ohms; at 9.375 GHz it ranges from 335 to 465 ohms.
The maximum VSWR is 1.5:1 at both 3.06 GHz and 9.375 GHz.
The operating temperature range is -55°C to +150°C.
The storage temperature range is -65°C to +200°C.
The device is available in CS100 and CS101 packages with through-hole mounting.