| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature | |
| Turn On Time |
The CENTRAL SEMICONDUCTOR 2N4859A is an N-Channel Silicon JFET designed for analog switching and chopper applications. This device operates with a maximum Drain-Source Voltage of 30V and a maximum Drain-Gate Voltage of 30V. The maximum Reverse Gate-Source Voltage is also rated at 30V, with a maximum Forward Gate Current of 50mA.
With a Power Dissipation (PD) of 360mW at 25°C, the 2N4859A is suitable for various switching tasks. The operating and storage junction temperature range is from -65°C to +200°C. Key electrical characteristics include a Zero-Gate Voltage Drain Current (IDSS) of 50mA and a Gate-Source Cutoff Voltage (VGS(OFF)) ranging from 4.0V to 10V.
The JFET is housed in a TO-18 case and is designed for through-hole mounting. Its electrical characteristics make it a reliable component for applications requiring precise analog signal control and switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the 2N4859A is 30V.
The power dissipation of the 2N4859A at 25°C is 360mW.
The operating junction temperature range for the 2N4859A is -65°C to +200°C.
The Zero-Gate Voltage Drain Current (IDSS) for the 2N4859A is 50mA.
The Gate-Source Cutoff Voltage (VGS(OFF)) for the 2N4859A ranges from 4.0V to 10V.
The 2N4859A is supplied in a TO-18 case.