| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Transistor Type |
The NTE Electronics NTE2520 is a power bipolar junction transistor (BJT) with a PNP silicon construction. It is designed for applications requiring a collector current of up to 1.5A and offers a collector-emitter breakdown voltage of 160V.
This transistor comes in a TO-126 package, suitable for various electronic circuits. Its specifications make it a component for power switching or amplification tasks within its operational limits.
Key electrical characteristics include its PNP type and silicon material, contributing to its performance in discrete semiconductor applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1.5A.
160V.
PNP.
1 element.
Silicon.
TO-126.