| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,520,000 pcs
|
4520000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBT9012H is a PNP Bipolar Transistor - BJT from STMicroelectronics, designed for various electronic applications. This component offers a collector-emitter breakdown voltage of 30V and a power dissipation of 200mW. It has a DC current gain (hFE) of 230 at 50mA and 1V, with a continuous collector current rating of 500mA.
The transistor operates at a transition frequency (fT) of 100MHz and has a typical collector-emitter saturation voltage (Vcesat) of 600mV at 500mA and 50mA. The operating temperature range extends up to 150°C.
Packaged in a TO-236-3 surface-mount case, the MMBT9012H is suitable for compact electronic designs. It is RoHS3 compliant, with MSL 1 Unlimited and REACH Unaffected status, indicating adherence to environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 30V.
The power dissipation is 200mW.
The DC current gain is 230 at 50mA and 1V.
The package type is TO-236-3.
The operating temperature is up to 150°C.
The RoHS status is RoHS3 Compliant.