Mfr Part #:

2SA1312-GR

Mfr Name: Toshiba

The Toshiba 2SA1312-GR is a PNP bipolar junction transistor designed for amplifier applications. It features a 120V breakdown voltage and a 100mA current rating.

✓ Total Stock: 529,100 pcs

$ Price Range: $0.99

2SA1312-GR Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	452,000 pcs On Request	452000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	77,100 pcs On Request	77100 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

2SA1312-GR Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Mounting Type	Surface Mount
Power Dissipation	0.15 W
Transistor Type	PNP

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2SA1312-GR Description

Short technical summary and product information.

The Toshiba 2SA1312-GR is a silicon PNP epitaxial transistor suitable for amplifier applications. It offers a maximum collector-emitter voltage of 120V and a maximum collector current of 100mA.

This transistor has a minimum DC current gain (hFE) of 200 and a nominal transition frequency (fT) of 100 MHz. The power dissipation is rated at 0.15W.

Packaged in a surface-mount TO-236 (SC-59, S-MINI) small outline plastic/epoxy case with gull wing terminals, the 2SA1312-GR is supplied on tape and reel. It is designed for general amplification tasks in electronic circuits.

Key electrical characteristics include a 120V collector-emitter voltage and 100mA collector current. The device material is silicon, and it is classified as a PNP type transistor.

2SA1312-GR Quick Information

Product Type: Small Signal Transistor

Canonical Name: Toshiba 2SA1312-GR PNP Epitaxial Silicon Small Signal Transistor

Subcategory: Single PNP

2SA1312-GR Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2SA1312-GR Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA1312-GR Features

PNP silicon epitaxial transistor.
120V collector-emitter voltage.
100mA maximum collector current.
Minimum DC current gain of 200.
Surface mount TO-236 package.

2SA1312-GR Applications

Used in general purpose amplifier circuits
Suitable for low power switching applications
Ideal for signal amplification in audio equipment
Common in surface mount PCB designs
Applicable in consumer electronics control modules

2SA1312-GR FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the 2SA1312-GR?

The maximum collector-emitter voltage is 120 V.

What is the maximum collector current for the 2SA1312-GR?

The maximum collector current is 0.1000 A.

What is the minimum DC current gain (hFE) of the 2SA1312-GR?

The minimum DC current gain is 200.

What is the transition frequency of the 2SA1312-GR?

The nominal transition frequency is 100 MHz.

What is the power dissipation of the 2SA1312-GR?

The power dissipation is 0.15 W.

What type of transistor is the 2SA1312-GR?

The 2SA1312-GR is a PNP silicon epitaxial transistor.

What package is the 2SA1312-GR supplied in?

The 2SA1312-GR is supplied in a surface mount TO-236 (SC-59, S-MINI) small outline plastic/epoxy package.