| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000,000 pcs
|
2000000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,852 pcs
|
2852 pcs | On Request | 1 | On Request | On Request | 1652+ | On Request | On Request |
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| Manufacturer Name | |
| Power Dissipation | |
| Transistor Type |
The Toshiba 2SA1586-Y is a PNP bipolar junction transistor (BJT) designed for discrete semiconductor applications. It comes in a compact SOT-323 (SC-70-3) surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a collector-emitter breakdown voltage (Vceo) of 50V, a continuous collector current (Ic) of 150mA, and a power dissipation (Pd) of 200mW. The DC current gain (hFE) is specified at 120 at 2mA collector current and 6V Vce. The transistor also features a transition frequency (Ft) of 80MHz and a collector-emitter saturation voltage (Vcesat) of 100mV at 100mA collector current and 10mA base current.
This component is well-suited for general-purpose amplification and switching applications where a PNP transistor is required. Its small package size and electrical specifications make it a versatile choice for various electronic circuits. The RoHS status is listed as compliant, with MSL 1 and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SA1586-Y comes in a SOT-323 (SC-70-3) surface mount package.
It is a PNP bipolar junction transistor.
The collector current is 150 mA.
The collector-emitter breakdown voltage is 50 V.
The DC current gain (hFE) is 120 at 2 mA collector current and 6V Vce.
The transition frequency is 80 MHz.
The power dissipation is 200 mW.