2SA1586-Y The Toshiba 2SA1586-Y is a PNP bipolar transistor in a SOT-323 package. It offers a 50V collector-emitter breakdown voltage and 150mA collector current.
Mfr Part #:

2SA1586-Y

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 2SA1586-Y is a PNP bipolar transistor in a SOT-323 package. It offers a 50V collector-emitter breakdown voltage and 150mA collector current.
Total Stock: 2,002,852 pcs
$ Price Range: $0.99

2SA1586-Y Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000,000 pcs
2000000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,852 pcs
2852 pcs On Request 1 On Request On Request 1652+ On Request On Request

2SA1586-Y Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Power Dissipation
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2SA1586-Y Description

Short technical summary and product information.

The Toshiba 2SA1586-Y is a PNP bipolar junction transistor (BJT) designed for discrete semiconductor applications. It comes in a compact SOT-323 (SC-70-3) surface-mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a collector-emitter breakdown voltage (Vceo) of 50V, a continuous collector current (Ic) of 150mA, and a power dissipation (Pd) of 200mW. The DC current gain (hFE) is specified at 120 at 2mA collector current and 6V Vce. The transistor also features a transition frequency (Ft) of 80MHz and a collector-emitter saturation voltage (Vcesat) of 100mV at 100mA collector current and 10mA base current.

 

This component is well-suited for general-purpose amplification and switching applications where a PNP transistor is required. Its small package size and electrical specifications make it a versatile choice for various electronic circuits. The RoHS status is listed as compliant, with MSL 1 and REACH unaffected.

2SA1586-Y Quick Information

Product Type: PNP Bipolar Transistor
Series: 2SA1586
Canonical Name: Toshiba 2SA1586-Y PNP Bipolar Transistor
Subcategory: Bipolar Transistor

2SA1586-Y Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SA1586-Y Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA1586-Y Features

  • PNP bipolar junction transistor.
  • 50V collector-emitter breakdown voltage.
  • 150mA continuous collector current.
  • 200mW power dissipation.
  • SOT-323 surface-mount package.

2SA1586-Y Applications

  • Used in general purpose switching circuits.
  • Suitable for audio amplification stages.
  • Ideal for signal processing in low-power designs.
  • Common in portable electronic devices.

2SA1586-Y FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the 2SA1586-Y?

The 2SA1586-Y comes in a SOT-323 (SC-70-3) surface mount package.

What type of transistor is the 2SA1586-Y?

It is a PNP bipolar junction transistor.

What is the maximum collector current of the 2SA1586-Y?

The collector current is 150 mA.

What is the collector-emitter breakdown voltage of the 2SA1586-Y?

The collector-emitter breakdown voltage is 50 V.

What is the DC current gain of the 2SA1586-Y?

The DC current gain (hFE) is 120 at 2 mA collector current and 6V Vce.

What is the transition frequency of the 2SA1586-Y?

The transition frequency is 80 MHz.

What is the power dissipation of the 2SA1586-Y?

The power dissipation is 200 mW.

2SA1586-Y Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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2SA1462-T1B
2SA1462-T1B
Renesas
The Renesas 2SA1462-T1B is a PNP bipolar junction transistor. It offers a 15V collector-emitter voltage and 50mA continuous collector current.
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