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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics NTE16002 is a silicon NPN transistor suitable for RF power amplifier and driver applications. It is specified for a maximum collector emitter voltage (VCEO) of 40V and a collector base voltage (VCB) of 65V.
This transistor delivers a nominal RF power output (PO) of 13.5W at a frequency of 175MHz. It has a maximum collector current (IC) of 3A. The component is housed in a TO-60 case.
This part is identified as a general purpose silicon NPN transistor. Its specifications make it suitable for various RF power amplification tasks in electronic circuits.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum VCEO is 40V.
The package type is TO-60.
The nominal RF power output is 13.5W at 175MHz.
The maximum collector current is 3A.
The maximum VCB is 65V.