| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Mitsubishi Electric RD02MUS1-101 is a Silicon MOSFET Power Transistor specifically designed for VHF/UHF RF power amplifiers. It is suitable for the output stage of high power amplifiers in mobile radio sets operating within the VHF/UHF bands.
Key features include high power gain, with Pout greater than 2W and Gp greater than 16dB at Vdd=7.2V and frequencies of 175MHz and 520MHz. The device also boasts high efficiency, typically 65% at both 175MHz and 520MHz.
Electrical characteristics include a drain-to-source voltage of 30V, gate-to-source voltage of ±20V, and a maximum drain current of 1.5A. The junction temperature is rated up to 150°C.
This RoHS compliant transistor comes in a TO-220 package suitable for through-hole mounting. It is an electrostatic sensitive device and requires appropriate handling precautions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The output power is a minimum of 2W at 175MHz when VDD=7.2V, Pin=50mW, and Idq=200mA.
The drain efficiency is typically 65% at 520MHz when VDD=7.2V, Pin=50mW, and Idq=200mA.
The maximum drain-to-source voltage is 30V.
The storage temperature range is -40°C to +125°C.
The RD02MUS1-101 is supplied in a TO-220 package.