| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | 93 | On Request | On Request |
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| Transistor Type |
The MRF245 from Motorola Semiconductor is an NPN RF Power Transistor suitable for demanding RF applications. It features a maximum collector current (Ic) of 20A and a collector-emitter voltage (Vceo) of 18V.
With a maximum power dissipation of 250W and an operating frequency up to 175MHz, this transistor is built for high-power RF performance. The current gain (hFE) ranges from a minimum of 10 to a maximum of 150.
Packaged in the SOT-119 case style, the MRF245 is designed for efficient thermal management and reliable operation in high-frequency circuits. Its specifications make it suitable for various RF power amplification tasks.
Key electrical parameters include a collector-base voltage (Vcbo) of 36V. The maximum operating temperature is rated at 175°C, ensuring performance under demanding conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the MRF245 is 20A.
The MRF245 operates at a frequency of 175MHz.
The MRF245 has a maximum power dissipation of 250W.
The MRF245 is supplied in a SOT-119 package.
The MRF245 can operate at a maximum temperature of 175°C.
The minimum current gain (hFE) for the MRF245 is 10.
The maximum current gain (hFE) for the MRF245 is 150.