| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Mitsubishi RD06HVF1-101 is a discrete Silicon RF Power MOS FET specifically engineered for applications in VHF band mobile radio sets. This transistor is designed for the output stage of high power amplifiers.
Key electrical characteristics include a minimum output power of 6W at 175MHz, with a typical power gain exceeding 13dB under specific conditions (Vdd=12.5V, f=175MHz). It features a drain-source voltage rating of 50V and a gate-source voltage rating of ±20V. The channel dissipation is rated at 27.8W at 25°C, with a maximum drain current of 3A.
This device operates within a channel temperature range of -40°C to +150°C and has a storage temperature range of -40°C to +150°C. The thermal resistance from junction to case is 4.5°C/W.
The RD06HVF1-101 is RoHS compliant. It is suitable for high power amplifier applications in the VHF frequency band.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RD06HVF1-101 has a minimum output power of 6W.
The RD06HVF1-101 operates at 175MHz.
The maximum drain-to-source voltage (Vdss) for the RD06HVF1-101 is 50V.
The RD06HVF1-101 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the RD06HVF1-101 is 1 Unlimited.