IKQ40N120CH3
Infineon
The Infineon IKQ40N120CH3 is a third-generation IGBT with high-speed switching capabilities. It offers 1200V voltage and 40A current ratings.
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1,414 pcs
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1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE40P13S is a P-Channel MOSFET manufactured by NCE Power Semiconductor. It employs advanced trench technology and design, resulting in excellent RDS(ON) performance and low gate charge. This makes it suitable for a broad range of electronic applications where efficient switching and power management are critical.
Key electrical characteristics include an RDS(ON) of 13 mOhm, achieved through its advanced design. The low gate charge contributes to efficient operation, reducing switching losses. While specific breakdown voltage and continuous drain current ratings are not detailed here, the part's construction suggests robust performance for its intended applications.
This MOSFET is designed for integration into various electronic circuits. Its specifications make it a viable option for power switching, load management, and other control functions within electronic systems. Further details on specific operating conditions and performance parameters would typically be found in the manufacturer's datasheet.
The RDS(ON) is 13 mOhm.
The NCE40P13S uses advanced trench technology and design.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.
The REACH status is REACH Unaffected.
