| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,477 pcs
|
1477 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
620 pcs
|
620 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| SVHC Present |
The Infineon IKW50N65EH5 is a high-speed Insulated Gate Bipolar Transistor (IGBT) utilizing TRENCHSTOP™ 5 technology. This component is co-packed with a RAPID 1 fast and soft antiparallel diode, enhancing its performance in power switching applications.
Key electrical specifications include a breakdown voltage of 650V and a continuous collector current of 50A. The device is designed for best-in-class efficiency in both hard switching and resonant topologies. It also features low gate charge (QG) for improved switching characteristics.
The IGBT is housed in a standard PG-TO247-3 package, designed for through-hole mounting. Its maximum junction temperature is rated at 175°C, ensuring reliability under demanding thermal conditions. The component is qualified according to JEDEC standards for target applications.
Potential applications for the IKW50N65EH5 include uninterruptible power supplies (UPS), solar converters, welding converters, and mid to high range switching frequency converters. It serves as a plug-and-play replacement for previous generation IGBTs.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 650 V.
The continuous collector current is 50 A.
The maximum junction temperature is 175°C.
It is supplied in the PG-TO247-3 package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.