IKW50N65EH5 The Infineon IKW50N65EH5 is a high-speed IGBT from the TRENCHSTOP™ 5 technology family. It offers a 650V breakdown voltage and 50A collector current, suitable for demanding power applications.
Mfr Part #:

IKW50N65EH5

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IKW50N65EH5 is a high-speed IGBT from the TRENCHSTOP™ 5 technology family. It offers a 650V breakdown voltage and 50A collector current, suitable for demanding power applications.
Total Stock: 2,097 pcs
$ Price Range: $3.63

IKW50N65EH5 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,477 pcs
1477 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
620 pcs
620 pcs On Request 1 On Request On Request 14+ On Request On Request

IKW50N65EH5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Mounting Type
SVHC Present

IKW50N65EH5 Description

Short technical summary and product information.

The Infineon IKW50N65EH5 is a high-speed Insulated Gate Bipolar Transistor (IGBT) utilizing TRENCHSTOP™ 5 technology. This component is co-packed with a RAPID 1 fast and soft antiparallel diode, enhancing its performance in power switching applications.

 

Key electrical specifications include a breakdown voltage of 650V and a continuous collector current of 50A. The device is designed for best-in-class efficiency in both hard switching and resonant topologies. It also features low gate charge (QG) for improved switching characteristics.

 

The IGBT is housed in a standard PG-TO247-3 package, designed for through-hole mounting. Its maximum junction temperature is rated at 175°C, ensuring reliability under demanding thermal conditions. The component is qualified according to JEDEC standards for target applications.

 

Potential applications for the IKW50N65EH5 include uninterruptible power supplies (UPS), solar converters, welding converters, and mid to high range switching frequency converters. It serves as a plug-and-play replacement for previous generation IGBTs.

IKW50N65EH5 Quick Information

Product Type: IGBT
Series: High speed 5
Canonical Name: Infineon IKW50N65EH5 IGBT
Subcategory: Single IGBT

IKW50N65EH5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

IKW50N65EH5 Estimated Pricing

Qty Low High
1+ $3.63 $3.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

IKW50N65EH5 Features

  • 650V breakdown voltage rating.
  • 50A continuous collector current.
  • TRENCHSTOP™ 5 IGBT technology.
  • Integrated RAPID 1 antiparallel diode.
  • PG-TO247-3 through-hole package.

IKW50N65EH5 Applications

  • Suitable for uninterruptible power supplies.
  • Used in solar power converters.
  • Applicable for welding converters.
  • Ideal for high frequency converters.

IKW50N65EH5 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the IKW50N65EH5?

The breakdown voltage is 650 V.

What is the continuous collector current for the IKW50N65EH5?

The continuous collector current is 50 A.

What is the maximum junction temperature for this IGBT?

The maximum junction temperature is 175°C.

What package type is the IKW50N65EH5 supplied in?

It is supplied in the PG-TO247-3 package.

Is the IKW50N65EH5 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IKW50N65EH5?

The Moisture Sensitivity Level is 1 Unlimited.

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