| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
48 pcs
|
48 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Lead Spacing | |
| Mounting Type | |
| Package / Case | |
| Technology | |
| Transistor Type |
The NEC 2SK3115 is an N-Channel DMOS FET suitable for high voltage applications such as switching power supplies and AC adapters. It features a low gate charge and excellent switching characteristics.
This MOSFET has a maximum drain-source voltage of 600V and a continuous drain current of 6A. The on-resistance is a maximum of 1.2 Ohms. It is housed in a TO-220AB package and is designed for through-hole mounting.
The device's N-channel DMOS FET technology contributes to its efficient performance in power conversion circuits. Its robust design makes it a reliable component for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The continuous drain current is 6A.
The maximum on-resistance is 1.2 Ohm.
The 2SK3115 is an N-Channel DMOS FET.
The 2SK3115 is supplied in a TO-220AB package.
The 2SK3115 is designed for high voltage applications such as switching power supplies and AC adapters.