| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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64 pcs
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64 pcs | On Request | 1 | On Request | On Request | 2000 | On Request | On Request |
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| Manufacturer Name | |
| Lead Spacing |
The MTW7N80E is an N-CHANNEL POWER MOSFET manufactured by On Semiconductor. This component is designed for high-voltage applications, featuring a maximum drain-source voltage of 800V.
Key electrical characteristics include a drain-source resistance of 1Ω and a maximum power dissipation of 180W. The device operates at a maximum temperature of 150°C.
The MOSFET is housed in a TO-247 package, suitable for through-hole mounting. Its specifications make it a suitable component for various power switching and amplification circuits.
Environmental compliance includes RoHS3 compliance, an MSL of 1, and REACH unaffected status. This ensures suitability for a wide range of manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 800V.
The typical drain-source resistance is 1Ω.
The maximum power dissipation is 180W.
The maximum operating temperature is 150°C.
The MTW7N80E is available in a TO-247 package.
Yes, the MTW7N80E is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
