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FDS6576 The FDS6576 is a P-Channel MOSFET from ON Semiconductor with a 20V drain-source voltage and 11A continuous drain current. It is available in an 8-SOIC surface mount package.
Mfr Part #:

FDS6576

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDS6576 is a P-Channel MOSFET from ON Semiconductor with a 20V drain-source voltage and 11A continuous drain current. It is available in an 8-SOIC surface mount package.
Total Stock: 371,122 pcs

FDS6576 Available from 5 distributors

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FDS6576 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDS6576 Description

Short technical summary and product information.

The FDS6576 is a P-Channel MOSFET manufactured by ON Semiconductor. It is designed for applications requiring a 20V drain-to-source voltage (Vdss) and can handle a continuous drain current of up to 11A.

 

This MOSFET features a low Rds On (Max) of 14mOhm at 11A and 4.5V Vgs, making it efficient for power switching applications. The gate charge (Qg) is 60nC (Max) at 4.5V, and the input capacitance (Ciss) is 4044pF (Max) at 10V.

 

The device has a maximum gate-source voltage (Vgs) of ±12V and a gate threshold voltage (Vgs(th)) of 1.5V (Max) at 250µA. The maximum power dissipation is 2.5W (Ta), and it operates within a temperature range of -55°C to 150°C (TJ).

 

Packaged in an 8-SOIC (0.154", 3.90mm Width) format, the FDS6576 is designed for surface mounting.

FDS6576 Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDS6576 P-Channel MOSFET
Subcategory: P-Channel

FDS6576 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDS6576 Features

  • P-Channel MOSFET technology.
  • 20V maximum drain-source voltage.
  • 11A continuous drain current.
  • Low Rds On of 14mOhm at 11A.
  • Surface mount 8-SOIC package.

FDS6576 Applications

  • Suitable for power switching.
  • Efficient load switching.
  • General purpose P-channel FET.

FDS6576 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vdss) for the FDS6576?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current (Id) for the FDS6576?

The continuous drain current is 11A (Ta).

What is the Rds On (Max) for the FDS6576?

The Rds On (Max) is 14mOhm at 11A, 4.5V.

What is the gate charge (Qg) for the FDS6576?

The gate charge (Qg) is 60nC (Max) at 4.5V.

What is the maximum gate-source voltage (Vgs) for the FDS6576?

The maximum gate-source voltage (Vgs) is ±12V.

What is the package type for the FDS6576?

The FDS6576 is supplied in an 8-SOIC (0.154", 3.90mm Width) package.

What is the operating temperature range for the FDS6576?

The operating temperature range is -55°C to 150°C (TJ).

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