SI4442DY-T1-E3 The Vishay Dale SI4442DY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous current rating of 15A. It features a low on-resistance of 4.5mOhm at 10V gate-source voltage.
Mfr Part #:

SI4442DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4442DY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous current rating of 15A. It features a low on-resistance of 4.5mOhm at 10V gate-source voltage.
✓ Total Stock: 226,000 pcs
$ Price Range: $0.99

SI4442DY-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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226,000 pcs
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SI4442DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4442DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4442DY-T1-E3 is a high-performance N-Channel MOSFET designed for various power switching applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 15A at 25°C ambient temperature.

 

Key electrical characteristics include a low drain-source on-resistance (Rds(on)) of 4.5mOhm at a gate-source voltage (Vgs) of 10V and a current of 22A. The gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA. The device also features a maximum power dissipation of 1.6W at 25°C ambient temperature.

 

This MOSFET is housed in an 8-SOIC package, suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The device is rated for a gate-source voltage of ±12V and has a total gate charge (Qg) of 50 nC at 4.5V Vgs.

 

Features such as halogen-free compliance and TrenchFET technology indicate its suitability for modern electronic designs requiring efficient and reliable power management.

SI4442DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Si4442DY N-Channel 30V MOSFET
Subcategory: N-Channel

SI4442DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4442DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4442DY-T1-E3 Features

  • N-Channel 30V MOSFET
  • Low Rds On: 4.5mOhm @ 22A, 10V
  • Continuous Current: 15A (Ta=25°C)
  • Power Dissipation: 1.6W (Ta=25°C)
  • Surface Mount 8-SOIC Package

SI4442DY-T1-E3 Applications

  • Power switching applications
  • Efficient power management
  • Automotive applications
  • Industrial control systems

SI4442DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the SI4442DY-T1-E3?

The drain-source voltage rating is 30 V.

What is the maximum continuous drain current for the SI4442DY-T1-E3?

The maximum continuous drain current is 15 A at 25°C ambient temperature.

What is the Rds On (Max) at Vgs = 10V for the SI4442DY-T1-E3?

The Rds On (Max) is 4.5mOhm at 22A and 10V Vgs.

What is the operating temperature range for the SI4442DY-T1-E3?

The operating temperature range is -55°C to 150°C.

What package type is the SI4442DY-T1-E3 available in?

The SI4442DY-T1-E3 is available in an 8-SOIC package.

Is the SI4442DY-T1-E3 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI4442DY-T1-E3?

The Moisture Sensitivity Level is 1.

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