| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
263,520 pcs
|
263520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,589 pcs
|
1589 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,150 pcs
|
1150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
224 pcs
|
224 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
45 pcs
|
45 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI4848DY-T1-E3 is a single N-Channel MOSFET designed for various electronic applications. It offers a maximum drain-to-source voltage (Vdss) of 150V and can handle a continuous drain current of up to 2.7A at ambient temperature.
The MOSFET has a low on-resistance (Rds On) of 85mOhm, measured at a drain current (Id) of 3.5A and gate-source voltage (Vgs) of 10V. The gate threshold voltage (Vgs(th)) is a minimum of 2V at 250µA. It operates within a temperature range of -55°C to 150°C (TJ).
Packaged in an 8-SOIC (0.154", 3.90mm Width) case, this component is designed for surface mounting. The maximum power dissipation is rated at 1.5W (Ta). The gate charge (Qg) is a maximum of 21nC at 10V, and the maximum gate-source voltage is ±20V.
This MOSFET utilizes Metal Oxide technology and is suitable for applications requiring efficient switching and power handling. Its specifications make it a reliable choice for power management circuits and other semiconductor applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
8-SOIC (0.154", 3.90mm Width) surface-mount package.
-55°C to 150°C (junction).
85mOhm maximum at Id=3.5A, Vgs=10V.
2V minimum at Id=250µA.
21nC at Vgs=10V.
6V to 10V for optimal on-resistance.