MMBT3906WT1 The MMBT3906WT1 is a PNP bipolar transistor from ON Semiconductor designed for general purpose amplifier applications. It features a -40V collector-emitter voltage and a -200mA continuous collector current.
Mfr Part #:

MMBT3906WT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT3906WT1 is a PNP bipolar transistor from ON Semiconductor designed for general purpose amplifier applications. It features a -40V collector-emitter voltage and a -200mA continuous collector current.
Total Stock: 9,000 pcs
$ Price Range: $0.99

MMBT3906WT1 Available from 1 distributor

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MMBT3906WT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Continuous
Collector-Base Breakdown Voltage
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Voltage
Emitter-Base Breakdown Voltage
Emitter-Base Voltage
Halogen Free
Junction and Storage Temperature
Mounting Type
Pb-Free
Tape & Reel
Thermal Resistance Junction-to-Ambient
Total Device Dissipation

MMBT3906WT1 Description

Short technical summary and product information.

The MMBT3906WT1 is a PNP silicon transistor manufactured by ON Semiconductor, designed for general-purpose amplifier applications. This device is housed in a compact SOT-323 (SC-70) surface-mount package, making it suitable for low-power applications.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of -200mA. The transistor also has a maximum emitter-base voltage (VEBO) of -5V. Thermal characteristics include a maximum total power dissipation of 150mW at 25°C and a junction-to-ambient thermal resistance of 833°C/W.

 

The MMBT3906WT1 is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is also AEC-Q101 Qualified and PPAP Capable when ordered with the 'S' prefix, indicating suitability for automotive and other demanding applications.

 

This transistor is supplied in tape and reel packaging, with 3000 units per reel, designed for automated surface-mount assembly processes.

MMBT3906WT1 Quick Information

Product Type: PNP Transistor
Canonical Name: MMBT3906WT1 PNP Transistor
Subcategory: PNP

MMBT3906WT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT3906WT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT3906WT1 Features

  • PNP silicon transistor for amplification.
  • Rated for -40V collector-emitter voltage.
  • Handles up to -200mA continuous collector current.
  • Compact SOT-323 surface-mount package.
  • Pb-Free and RoHS compliant.

MMBT3906WT1 Applications

  • General purpose amplifier circuits.
  • Low power surface mount applications.
  • Automotive applications with 'S' prefix.
  • Signal amplification and switching.

MMBT3906WT1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT3906WT1?

The maximum collector-emitter voltage (VCEO) for the MMBT3906WT1 is -40 Vdc.

What is the continuous collector current rating of the MMBT3906WT1?

The MMBT3906WT1 has a continuous collector current (IC) rating of -200 mAdc.

What package type is the MMBT3906WT1 supplied in?

The MMBT3906WT1 is supplied in the SC-70 / SOT-323 package.

What is the operating temperature range for the MMBT3906WT1?

The junction and storage temperature range for the MMBT3906WT1 is -55 to +150 °C.

Is the MMBT3906WT1 RoHS compliant?

The MMBT3906WT1 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MMBT3906WT1?

The Moisture Sensitivity Level (MSL) for the MMBT3906WT1 is 1 Unlimited.

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