| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The MMBT3906WT1 is a PNP silicon transistor manufactured by ON Semiconductor, designed for general-purpose amplifier applications. This device is housed in a compact SOT-323 (SC-70) surface-mount package, making it suitable for low-power applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of -200mA. The transistor also has a maximum emitter-base voltage (VEBO) of -5V. Thermal characteristics include a maximum total power dissipation of 150mW at 25°C and a junction-to-ambient thermal resistance of 833°C/W.
The MMBT3906WT1 is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is also AEC-Q101 Qualified and PPAP Capable when ordered with the 'S' prefix, indicating suitability for automotive and other demanding applications.
This transistor is supplied in tape and reel packaging, with 3000 units per reel, designed for automated surface-mount assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT3906WT1 is -40 Vdc.
The MMBT3906WT1 has a continuous collector current (IC) rating of -200 mAdc.
The MMBT3906WT1 is supplied in the SC-70 / SOT-323 package.
The junction and storage temperature range for the MMBT3906WT1 is -55 to +150 °C.
The MMBT3906WT1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MMBT3906WT1 is 1 Unlimited.
