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MMBT3906TT1G The MMBT3906TT1G is a PNP bipolar junction transistor from On Semiconductor. It features a -40V collector-emitter voltage and a continuous collector current of -200mA.
Mfr Part #:

MMBT3906TT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT3906TT1G is a PNP bipolar junction transistor from On Semiconductor. It features a -40V collector-emitter voltage and a continuous collector current of -200mA.
Total Stock: 584,971 pcs

MMBT3906TT1G Available from 5 distributors

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2,043 pcs
2043 pcs On Request 1 On Request On Request 1970-01-01 00:18:56 On Request On Request

MMBT3906TT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Continuous
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT3906TT1G Description

Short technical summary and product information.

The MMBT3906TT1G is a PNP silicon transistor designed for general purpose amplifier applications. It operates with a maximum collector-emitter voltage of -40 Vdc and can handle a continuous collector current of up to -200 mAdc.

 

This device offers a DC current gain (hFE) of at least 100 at 10mA and 1V. The saturation voltage (Vce Sat) is a maximum of 400mV at 5mA collector current and 50mA base current. With a frequency response up to 250MHz, it is suitable for various signal amplification tasks.

 

The transistor has a total power dissipation of 200 mW and operates within a temperature range of -55°C to 150°C (TJ). It is housed in a surface mountable SC-75, SOT-416 package, designed for low power applications.

 

Environmental compliance includes RoHS3 compliance and Pb-Free/Halogen Free status, verified by the datasheet. The MSL rating is 1.

MMBT3906TT1G Quick Information

Product Type: Transistor
Series: MMBT3906T
Canonical Name: MMBT3906TT1G PNP General Purpose Transistor
Subcategory: Single

MMBT3906TT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

MMBT3906TT1G Features

  • PNP silicon general purpose transistor.
  • Collector-emitter voltage rated at -40 Vdc.
  • Continuous collector current up to -200 mAdc.
  • Minimum DC current gain of 100.
  • Surface mount SC-75, SOT-416 package.

MMBT3906TT1G Applications

  • Suitable for general purpose amplification.
  • Designed for low power applications.
  • Surface mount circuit integration.

MMBT3906TT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the MMBT3906TT1G?

-40 Vdc

What is the continuous collector current for the MMBT3906TT1G?

-200 mAdc

What is the minimum DC current gain (hFE) of the MMBT3906TT1G?

100 @ 10mA, 1V

What is the operating temperature range for this transistor?

-55°C ~ 150°C (TJ)

What package type is the MMBT3906TT1G available in?

SC-75, SOT-416

Is the MMBT3906TT1G RoHS compliant?

RoHS3 Compliant

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