MMBT2907AWT1G The MMBT2907AWT1G is a PNP bipolar transistor from On Semiconductor designed for general purpose amplifier applications. It features a 60V collector-emitter voltage and 600mA continuous collector current.
Mfr Part #:

MMBT2907AWT1G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT2907AWT1G is a PNP bipolar transistor from On Semiconductor designed for general purpose amplifier applications. It features a 60V collector-emitter voltage and 600mA continuous collector current.
✓ Total Stock: 628,183 pcs

MMBT2907AWT1G Available from 8 distributors

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MMBT2907AWT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT2907AWT1G Description

Short technical summary and product information.

The MMBT2907AWT1G is a PNP silicon bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose amplifier applications and is housed in a compact SC-70-3 (SOT-323) surface-mount package, making it suitable for low-power electronic designs.

 

Key electrical specifications include a continuous collector current of 600 mAdc and a collector-emitter voltage of 60 Vdc. The transistor offers a DC current gain (hFE) of at least 100 at 150mA and 10V. Its frequency response reaches up to 200 MHz, indicating suitability for a range of signal amplification tasks.

 

The device operates within a wide temperature range of -55°C to 150°C. It has a total power dissipation of 150 mW. The SC-70-3 package is designed for surface mounting, requiring appropriate soldering techniques for reliable integration into printed circuit boards.

 

This transistor is Pb-Free and Halogen Free, aligning with environmental compliance standards. Its robust design and small footprint make it a versatile component for various amplifier circuits.

MMBT2907AWT1G Quick Information

Product Type: Bipolar Transistor
Series: MMBT2907A
Canonical Name: MMBT2907AWT1G PNP Bipolar Transistor
Subcategory: Bipolar (BJT) - Single

MMBT2907AWT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

MMBT2907AWT1G Features

  • PNP silicon bipolar transistor.
  • 60V collector-emitter voltage.
  • 600mA continuous collector current.
  • 200MHz operating frequency.
  • SC-70-3 surface mount package.

MMBT2907AWT1G Applications

  • Suitable for general purpose amplification.
  • Designed for low power applications.
  • Ideal for surface mount designs.

MMBT2907AWT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum continuous collector current for the MMBT2907AWT1G?

The maximum continuous collector current is 600 mAdc.

What is the collector-emitter voltage rating for this transistor?

The collector-emitter voltage is 60 Vdc.

What is the minimum DC current gain (hFE) for the MMBT2907AWT1G?

The minimum DC current gain (hFE) is 100 @ 150mA, 10V.

What is the operating frequency of the MMBT2907AWT1G?

The operating frequency is 200 MHz.

What is the package type for the MMBT2907AWT1G?

The package is SC-70-3 (SOT323).

What is the operating temperature range for this transistor?

The operating temperature range is -55°C to 150°C.

Is the MMBT2907AWT1G RoHS compliant?

Yes, the device is RoHS Compliant.

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