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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor MJE520 is a through-hole mounted NPN bipolar junction transistor (BJT) suitable for general purpose amplification and switching applications. This power transistor offers a collector-emitter breakdown voltage of 30V and can handle a continuous collector current of up to 3A, with a maximum power dissipation of 25W.
Designed for reliability and performance, the MJE520 is a robust component for various electronic circuits. Its through-hole package facilitates easy integration into breadboard or PCB designs, making it a practical choice for both prototyping and production.
Key electrical characteristics include its NPN transistor type, enabling it to function as a switch or amplifier in diverse electronic systems. The component's specifications make it a versatile option for engineers seeking a dependable power transistor for their designs.
| Qty | Low | High |
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| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 30V.
The maximum continuous collector current is 3A.
The maximum power dissipation is 25W.
The MJE520 is an NPN transistor.
The MJE520 is designed for general purpose amplifier and switch applications.
The MJE520 is mounted using a through-hole method.
