BD139

The BD139 is an epitaxial planar NPN transistor housed in a TO-126 plastic package. It is designed for use in audio amplifier circuits and driver stages, particularly in complementary or quasi-complementary configurations, pairing with its PNP counterpart, the BD140. This transistor provides reliable performance in medium power linear and switching applications.

Key electrical specifications include a Collector-Emitter Voltage (VCE) of 80V, a maximum Collector Cutoff Current (ICBO) of 100nA, and a Vce Saturation of 500mV at 50mA collector current and 5mA base current. The DC Current Gain (hFE) ranges from 40 to 250 at 0.5A collector current, with a minimum of 40 at 150mA and 2V Vce. Its transition frequency (fT) is 190MHz.

With a Total Power Dissipation (Ptot) of 1.25W, the BD139 is suitable for high power dissipation with excellent thermal stability. It operates within a temperature range of -55°C to 150°C. The transistor is available in a standard TO-126 package, facilitating easy mounting and handling in through-hole applications.

The BD139 is designed for reliable operation in audio and switching applications. It is suitable for driver stages for relays, motors, and other loads, as well as voltage regulators and power management circuits. Its general-purpose amplification capabilities make it useful in consumer electronics, industrial, and automotive equipment.