SI1012RT1GE3
Vishay
The Vishay Dale SI1012RT1GE3 is an N-Channel MOSFET designed for low-voltage applications. It features a low on-resistance and fast switching speed.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,650 pcs
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1650 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The ON Semiconductor MJD350T4 is a high voltage NPN power transistor designed for applications such as line operated audio output amplifiers, switchmode power supply drivers, and other switching circuits. It offers a collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of 0.5A.
This transistor is housed in a DPAK surface-mount package, making it suitable for automated assembly processes. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, aligning with modern environmental standards. Its robust construction and electrical characteristics make it a reliable choice for demanding power applications.
Key electrical parameters include a collector-base voltage (VCB) of 300V and a peak collector current (ICM) of 0.75A. The power dissipation is rated at 15W at 25°C case temperature. The operating and storage junction temperature range is -65°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MJD350T4 has a maximum collector-emitter voltage (VCEO) of 300 Vdc.
The continuous collector current (IC) for the MJD350T4 is 0.5 Adc.
The MJD350T4 is supplied in a DPAK package.
The operating and storage junction temperature range for the MJD350T4 is -65 to +150 °C.
Yes, the MJD350T4 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MJD350T4 is 1 Unlimited.
Yes, the MJD350T4 is lead-free.