MBT3906DW1T1 The MBT3906DW1T1 is a dual PNP transistor from ON Semiconductor, housed in a space-saving SOT-363 package. It is designed for general-purpose amplifier applications.
Mfr Part #:

MBT3906DW1T1

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MBT3906DW1T1 is a dual PNP transistor from ON Semiconductor, housed in a space-saving SOT-363 package. It is designed for general-purpose amplifier applications.
✓ Total Stock: 8,775 pcs
$ Price Range: $0.99

MBT3906DW1T1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 07+ On Request On Request
Non-Authorised Inventory information
2,775 pcs
2775 pcs On Request 1 On Request On Request On Request On Request On Request

MBT3906DW1T1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Mounting Type
Tape & Reel

MBT3906DW1T1 Description

Short technical summary and product information.

The MBT3906DW1T1 is a dual general-purpose PNP transistor manufactured by ON Semiconductor. It is a spin-off of popular discrete devices, combining two transistors into a single SOT-363 surface-mount package. This integration is ideal for low-power applications where board space is limited, reducing component count and simplifying circuit design.

 

Key electrical characteristics include a continuous collector current (IC) of -200 mAdc and a collector-emitter voltage (VCEO) of -40 Vdc. The device also features a low collector-emitter saturation voltage (VCE(sat)) of up to -0.4 Vdc and a DC current gain (hFE) ranging from 60 to 300 depending on the operating conditions.

 

The MBT3906DW1T1 is supplied in an 8 mm tape and reel, with 3,000 units per reel. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. The device is also AEC-Q101 Qualified and PPAP Capable when ordered with the 'S' prefix, making it suitable for automotive applications requiring unique site and control change requirements.

MBT3906DW1T1 Quick Information

Product Type: Dual Transistor Array
Canonical Name: MBT3906DW1T1 Dual General Purpose Transistor
Subcategory: Transistor Array

MBT3906DW1T1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MBT3906DW1T1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MBT3906DW1T1 Features

  • Dual PNP transistor in SOT-363.
  • Collector-Emitter Voltage: -40 Vdc.
  • Continuous Collector Current: -200 mAdc.
  • Low Collector-Emitter Saturation Voltage.
  • Pb-Free and Halogen-Free construction.

MBT3906DW1T1 Applications

  • Ideal for space-saving designs.
  • General-purpose amplifier applications.
  • Low-power surface mount circuits.
  • Automotive applications with 'S' prefix.

MBT3906DW1T1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MBT3906DW1T1?

-40 Vdc

What is the continuous collector current rating?

-200 mAdc

What is the package type for the MBT3906DW1T1?

SOT-363

What is the operating temperature range?

-55 to +150 °C

Is the MBT3906DW1T1 RoHS compliant?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL)?

1 Unlimited

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SMBT3946DW1T1G
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The ON Semiconductor SMBT3946DW1T1G is a complementary NPN/PNP bipolar transistor array designed for general-purpose amplifier applications. It features a 40V collector-emitter voltage and 200mA continuous collector current.
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MBT6429DW1T1G
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The ON Semiconductor MBT6429DW1T1G is a dual NPN bipolar transistor array designed for amplification. It operates at up to 45V and features a continuous collector current of 200mA.
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