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SMBT3946DW1T1G The ON Semiconductor SMBT3946DW1T1G is a complementary NPN/PNP bipolar transistor array designed for general-purpose amplifier applications. It features a 40V collector-emitter voltage and 200mA continuous collector current.
Mfr Part #:

SMBT3946DW1T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SMBT3946DW1T1G is a complementary NPN/PNP bipolar transistor array designed for general-purpose amplifier applications. It features a 40V collector-emitter voltage and 200mA continuous collector current.
✓ Total Stock: 541,003 pcs
$ Price Range: $0.17

SMBT3946DW1T1G Available from 3 distributors

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✓ Non-Authorised
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Flip Electronics ✓
Non-Authorised Inventory information
497,833 pcs
On Request
497833 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
36,000 pcs
On Request
36000 pcs On Request 1 On Request On Request 20+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,170 pcs
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7170 pcs On Request 1 On Request On Request 1747+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SMBT3946DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SMBT3946DW1T1G Description

Short technical summary and product information.

The SMBT3946DW1T1G from ON Semiconductor is a complementary NPN and PNP transistor array housed in a compact SOT-363/SC-88/SC70-6 surface mount package. This device is ideal for low-power applications where board space is limited.

 

Key electrical characteristics include a collector-emitter voltage rating of 40V for the NPN transistor and -40V for the PNP transistor. The continuous collector current is 200mA for the NPN and -200mA for the PNP. It offers a DC current gain (hFE) of 100 minimum at 10mA collector current and 1V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 300mV at 5mA/50mA for the NPN and 400mV for the PNP.

 

Operating across a wide temperature range from -55°C to +150°C, this transistor array is suitable for various environmental conditions. The device is Pb-free and Halogen-free, complying with RoHS standards. Its small footprint and integrated dual transistors simplify circuit design and reduce component count in surface mount applications.

SMBT3946DW1T1G Quick Information

Product Type: Transistor Array
Canonical Name: SMBT3946DW1T1G Complementary General Purpose Transistor

SMBT3946DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SMBT3946DW1T1G Estimated Pricing

Qty Low High
1+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMBT3946DW1T1G Features

  • Complementary NPN and PNP transistors in one package.
  • 40V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • Low Vce(sat) for efficient operation.
  • Compact SOT-363/SC-88/SC70-6 package.

SMBT3946DW1T1G Applications

  • Ideal for low-power amplifier circuits.
  • Reduces board space and component count.
  • Suitable for general-purpose switching.
  • Used in space-constrained designs.

SMBT3946DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type for SMBT3946DW1T1G?

SOT-363, also known as SC-88 or SC70-6, surface mount.

What is the operating temperature range?

-55°C to +150°C (junction temperature).

What is the maximum collector-emitter voltage?

40 Vdc for the NPN transistor and -40 Vdc for the PNP transistor.

What is the maximum continuous collector current?

200 mA for the NPN and -200 mA for the PNP.

What is the minimum DC current gain (hFE)?

100 at 10 mA collector current and 1 V collector-emitter voltage.

What is the transition frequency?

300 MHz for the NPN transistor and 250 MHz for the PNP transistor.

What is the total power dissipation?

150 mW at 25°C ambient temperature.

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