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SHN1B01FDW1T1G The SHN1B01FDW1T1G from ON Semiconductor is a complementary NPN and PNP bipolar junction transistor array designed for general-purpose amplification. It is supplied in a surface-mount SC-74 package.
Mfr Part #:

SHN1B01FDW1T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SHN1B01FDW1T1G from ON Semiconductor is a complementary NPN and PNP bipolar junction transistor array designed for general-purpose amplification. It is supplied in a surface-mount SC-74 package.
✓ Total Stock: 702,000 pcs
$ Price Range: $0.99

SHN1B01FDW1T1G Available from 1 distributor

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702,000 pcs
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SHN1B01FDW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Junction Temperature
Mounting Type
Operating Temperature
Power
Power Dissipation
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SHN1B01FDW1T1G Description

Short technical summary and product information.

The SHN1B01FDW1T1G is a complementary dual bipolar junction transistor (BJT) array from ON Semiconductor, featuring both NPN and PNP transistors in a single package. This device is designed for general-purpose amplification applications and offers high voltage and current capabilities, with a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 200mA.

 

The transistor array boasts a high DC current gain (hFE) of up to 200 at 2mA and 6V. It also features a low collector-emitter saturation voltage (VCE(sat)) of 0.3V maximum at 100mA collector current and 10mA base current. The device is rated for a maximum power dissipation of 380mW and operates within a junction temperature range of -55°C to 150°C.

 

Packaged in a compact SC-74 (SOT-457) surface-mount case, the SHN1B01FDW1T1G is suitable for space-constrained designs. It is AEC-Q101 qualified, making it suitable for automotive applications. The device is also Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

SHN1B01FDW1T1G Quick Information

Product Type: Transistor Array
Canonical Name: Complementary Dual General Purpose Amplifier Transistor
Subcategory: Array

SHN1B01FDW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SHN1B01FDW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SHN1B01FDW1T1G Features

  • Complementary NPN and PNP transistors.
  • High voltage and current ratings.
  • High DC current gain (hFE) up to 200.
  • Low collector-emitter saturation voltage.
  • AEC-Q101 qualified for automotive use.

SHN1B01FDW1T1G Applications

  • General purpose amplification circuits.
  • Switching applications requiring complementary pairs.
  • Compact surface-mount designs.
  • Automotive electronic systems.

SHN1B01FDW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) for the SHN1B01FDW1T1G?

The maximum collector-emitter voltage (VCEO) for the SHN1B01FDW1T1G is 50V.

What is the continuous collector current (IC) rating?

The continuous collector current (IC) rating is 200mA.

What is the DC current gain (hFE) of this transistor array?

The DC current gain (hFE) is a minimum of 200 at 2mA collector current and 6V collector-emitter voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SHN1B01FDW1T1G supplied in?

The SHN1B01FDW1T1G is supplied in an SC-74 surface-mount package.

Is the SHN1B01FDW1T1G RoHS compliant?

Yes, the SHN1B01FDW1T1G is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1.

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