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MBT6429DW1T1G The ON Semiconductor MBT6429DW1T1G is a dual NPN bipolar transistor array designed for amplification. It operates at up to 45V and features a continuous collector current of 200mA.
Mfr Part #:

MBT6429DW1T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MBT6429DW1T1G is a dual NPN bipolar transistor array designed for amplification. It operates at up to 45V and features a continuous collector current of 200mA.
✓ Total Stock: 57,797 pcs
$ Price Range: $0.99

MBT6429DW1T1G Available from 2 distributors

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✓ Non-Authorised
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Flip Electronics ✓
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38,777 pcs
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38777 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
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19,020 pcs
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19020 pcs On Request 1 On Request On Request On Request On Request On Request
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MBT6429DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Input Capacitance
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MBT6429DW1T1G Description

Short technical summary and product information.

The MBT6429DW1T1G from ON Semiconductor is a dual NPN bipolar junction transistor (BJT) array. This device is designed for general-purpose amplification applications.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 45V and a continuous collector current (IC) of 200mA. The transistor array boasts a high DC current gain (hFE) of 500 at low currents and a current-gain bandwidth product (fT) of up to 700MHz. Its low saturation voltage, with VCE(sat) at a maximum of 0.6V at 100mA collector current, makes it suitable for various switching and amplification circuits.

 

This component is housed in a compact SC-88 (SOT-363) surface-mount package, making it ideal for space-constrained designs. The device operates within a junction temperature range of -55°C to +150°C and has a total power dissipation of 150mW at 25°C ambient temperature.

 

The MBT6429DW1T1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring suitability for environmentally conscious manufacturing processes.

MBT6429DW1T1G Quick Information

Product Type: Bipolar Transistor Array
Canonical Name: MBT6429DW1T1G Dual NPN Bipolar Transistor
Subcategory: Transistor Array

MBT6429DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MBT6429DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MBT6429DW1T1G Features

  • Dual NPN bipolar transistor array.
  • 45V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • 700MHz current-gain bandwidth product.
  • Compact SC-88 (SOT-363) package.

MBT6429DW1T1G Applications

  • Used in switching circuits
  • Suitable for signal amplification
  • Ideal for compact electronic modules
  • Applicable in automotive and industrial electronics

MBT6429DW1T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MBT6429DW1T1G?

The maximum collector-emitter voltage (VCEO) for the MBT6429DW1T1G is 45 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for this device is 200 mAdc.

What is the current-gain bandwidth product (fT)?

The current-gain bandwidth product (fT) is 700 MHz at IC = 1.0 mAdc and VCE = 5.0 Vdc.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +150°C (TJ).

What package type is the MBT6429DW1T1G in?

The MBT6429DW1T1G is supplied in the SC-88 (SOT-363) package.

Is the MBT6429DW1T1G RoHS compliant?

Yes, the MBT6429DW1T1G is RoHS3 compliant.

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