| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
80 pcs
|
80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Number of Pins |
The JANTXV1N6467 is a unidirectional silicon Transient Voltage Suppressor (TVS) diode manufactured by Microsemi Corporation. This component is designed for transient voltage suppression applications, offering a peak pulse power rating of 500W at a 10/1000 µs waveform.
Key electrical characteristics include a minimum breakdown voltage of 43.7V and a maximum working peak voltage of 40.3V. The device exhibits a maximum leakage current of 2 µA at 40.3V. Its maximum clamping voltage is rated at 63.5V when subjected to a peak pulse current of 45A (10/1000 µs).
The JANTXV1N6467 is housed in an E Package, suitable for through-hole mounting. It has a 2-pin configuration. The TVS diode also has a maximum temperature coefficient of breakdown voltage of 0.101 %/°C.
This device is RoHS3 compliant, has an MSL rating of Level 1, and is REACH unaffected. It is suitable for applications requiring protection against transient voltage events.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JANTXV1N6467 has a peak pulse power of 500 W at 10/1000 s.
The minimum breakdown voltage for the JANTXV1N6467 is 43.7 V.
The maximum working peak voltage for the JANTXV1N6467 is 40.3 V.
The maximum clamping voltage for the JANTXV1N6467 is 63.5 V at 45 A (10/1000 s).
The JANTXV1N6467 is supplied in an E Package.
