| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | 9708 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Style | |
| Number of Pins |
The JAN2N3767 is a Power Silicon Transistor manufactured by STC MICROWAVE. This component is designed for through-hole mounting and comes in a TO-213AA package.
Key electrical specifications include a maximum Collector Emitter Voltage (VCEO) of 80V and a maximum Collector Base Voltage (VCBO) of 100V. It can handle a maximum Collector Current (IC) of 4A and has a maximum power dissipation (PD) of 25W.
Operating temperature ranges from a minimum of -65°C to a maximum of 200°C. The transistor has 3 pins.
Environmental compliance information indicates a RoHS status of Non-Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector Emitter Voltage (VCEO) for the JAN2N3767 is 80V.
The maximum Collector Current (IC) for the JAN2N3767 is 4A.
The operating temperature range for the JAN2N3767 is -65°C to 200°C.
The JAN2N3767 is mounted through hole.
The package type for the JAN2N3767 is TO-213AA.
The JAN2N3767 is RoHS Non-Compliant.