| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Material | |
| Military Grade | |
| Mounting Style | |
| Number of Pins | |
| Operating Temperature | |
| Power Dissipation | |
| Power Dissipation (Max) |
The JANTX2N2905A is a military-qualified PNP Silicon Bipolar Junction Transistor (BJT) manufactured by Motorola. It is designed for high-reliability applications and is available in a TO-39 package.
Key electrical specifications include a collector-emitter breakdown voltage of 60V and a minimum hFE of 100 at 150mA and 10V. The transistor has a maximum power dissipation of 800mW and an operating temperature range of -65°C to 200°C.
This device is suitable for switching applications. The TO-39 (TO-205AD) package is a through-hole type, requiring appropriate mounting considerations. The JANTX2N2905A series is qualified up to the JANS level, indicating its suitability for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 60V.
The minimum hFE is 100 at 150mA and 10V.
The maximum power dissipation is 600mW.
The operating temperature range is -65°C to 200°C.
The package is TO-39.
It has 3 pins.
The mounting style is through hole.